activity
20102026
most citedEngineering the structural and electronic phases of MoTe2 through W substitution

166 citations · 620 across the 17 of their papers we have counts for

collaborators
Showing cond-mat.mes-hallShow all

5 papers · 1 filter

cond-mat.mes-hall2025★ 8 cited

Upper critical magnetic field and multiband superconductivity in artificial high-Tc superlattices of nano quantum wells

G. Campi, A. Alimenti, G. Logvenov +10

Artificial high-Tc superlattices (AHTS) composed of quantum building blocks with tunable superconducting critical temperature have been synthesized by engineering their nanoscale g…

cond-mat.mes-hall2023

Giant Tunability of Intersubband Transitions and Quantum Hall Quartets in Few-Layer InSe Quantum Wells

Dmitry Shcherbakov, Greyson Voigt, Shahriar Memaran +8

A two-dimensional (2D) quantum electron system is characterized by the quantized energy levels, or subbands, in the out-of-plane direction. Populating higher subbands and controlli…

cond-mat.mes-hall2016★ 166 cited

Engineering the structural and electronic phases of MoTe2 through W substitution

D. Rhodes, D. A. Chenet, B. E. Janicek +30

MoTe is an exfoliable transition metal dichalcogenide (TMD) which crystallizes in three symmetries, the semiconducting trigonal-prismatic phase, the semimetallic $1T^{\pri…

cond-mat.mes-hall2014★ 122 cited

Pronounced photovoltaic response from multi-layered transition-metal dichalcogenides PN-junctions

Shahriar Memaran, Nihar R. Pradhan, Zhengguang Lu +7

Transition metal dichalcogenides (TMDs) are layered semiconductors with indirect band gaps comparable to Si. These compounds can be grown in large area, while their gap(s) can be t…

cond-mat.mes-hall2013★ 116 cited

Intrinsic carrier mobility of multi-layered MoS field-effect transistors on SiO

N. R. Pradhan, D. Rhodes, Q. Zhang +4

By fabricating and characterizing multi-layered MoS-based field-effect transistors (FETs) in a four terminal configuration, we demonstrate that the two terminal-configurations…