8 citations · 12 across the 5 of their papers we have counts for
5 papers
Enhancing charge stability of Ge quantum well heterostructures via SiGe layer composition engineering
Ding-Ming Huang, Jun-Hang Liu, Han Gao +10
Composition modulation is a powerful technique for designing materials with tailored properties, fueling the development of advanced semiconductor devices. In this work, we have im…
Single-Crystalline Al/Ge Heterostructure with an Atomically Sharp Commensurate Interface
Jian-Huan Wang, Ding-Ming Huang, Han Gao +3
A key challenge in developing Al/Ge heterostructures for quantum applications is Al-Ge interdiffusion. This process is facilitated by grain boundaries in polycrystalline films, whi…
Atomically resolved electron reflectivity at a metal/semiconductor interface
Ding-Ming Huang, Jian-Huan Wang, Jie-Yin Zhang +3
An atomically flat interface is achieved between face-centered cubic Al and diamond lattice Ge via molecular beam epitaxy (MBE). Based on the measurements of scanning tunneling mic…
Scalable and Tunable In-Plane Ge/Si(001) Nanowires Grown by Molecular Beam Epitaxy
Jian-Huan Wang, Ming Ming, Ding-Ming Huang +7
Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier…
Strain effects in twisted spiral antimonene
Ding-Ming Huang, Xu Wu, Kai Chang +4
van der Waals (vdW) layered materials exhibit fruitful novel physical properties. The energy band of such materials depends strongly on their structures and a tremendous variation…