most citedContact Resistance Optimization in MoS Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

21 citations · 21 across the 3 of their papers we have counts for

collaborators

4 papers

physics.app-ph2025

Intermediate Resistive State in Wafer-Scale MoS Memristors through Lateral Silver Filament Growth for Artificial Synapse Applications

Yuan Fa, Milan Buttberg, Ke Ran +17

Memristors based on two-dimensional materials (2DMs) have garnered significant attention due to their fast resistive switching (RS) behavior and atomic-level thickness, which enabl…

cond-mat.mtrl-sci2025

Facile Synthesis and On-Chip Color Tuning of CsPbBr@CsPbBrTFA Nanoplatelets via Ion Engineering

Sana Khan, Saeed Goudarzi, Stephan Schäffer +11

Metal halide perovskites (MHPs) have emerged as attractive optoelectronic materials because of high fluorescence quantum yield, broad color tunability, and excellent color purity.…

cond-mat.mtrl-sci2024★ 21 cited

Contact Resistance Optimization in MoS Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

Yuan Fa, Agata Piacentini, Bart Macco +5

Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS)-FETs, have gained significant attention for their potential for ultra…

physics.app-ph2024

Tunable Doping and Mobility Enhancement in 2D Channel Field-Effect Transistors via Damage-Free Atomic Layer Deposition of AlOX Dielectrics

Ardeshir Esteki, Sarah Riazimehr, Agata Piacentini +14

Two-dimensional materials (2DMs) have been widely investigated because of their potential for heterogeneous integration with modern electronics. However, several major challenges r…