3 papers
cond-mat.mtrl-sci2026
Influence of chemical vapor deposition conditions on N incorporation ratio on vicinal 4H-SiC(000-1) surface: Ab Initio-based approach
Wataru Ota, Akira Kusaba, Yoshihiro Kangawa +3
In experimental studies, increasing the ratio of source gases (C3H8/SiH4; C/Si ratio) for chemical vapor deposition (CVD) causes the growth rate to increase monotonically, and nitr…
cond-mat.mtrl-sci2025
Multistability of interstitial magnesium and its carrier recombined migration in gallium nitride
Yuansheng Zhao, Kenji Shiraishi, Tetsuo Narita +1
We present density-functional-theory calculations which provide a microscopic picture of the recombination-enhanced migration of interstitial Mg in GaN. We determine stable structu…
cond-mat.mtrl-sci2024
First-Principles Study of Recombination-Enhanced Migration of an Interstitial Magnesium in Gallium Nitride
Yuansheng Zhao, Kenji Shiraishi, Tetsuo Narita +1
The stable and metastable configurations of interstitial Mg in GaN and its migration energy barriers are studied from first-principles calculations. In addition to the conventional…