3 papers
cond-mat.mtrl-sci2025
Unravelling the oxygen influence in cubic bixbyite InO on Raman active phonon modes by isotope studies
Johannes Feldl, Roland Gillen, Janina Maultzsch +5
In this study, we performed comprehensive investigations on the Raman active phonon modes in cubic bixbyite InO, an important oxide based, wide-bandgap semiconductor. Funda…
cond-mat.mtrl-sci2024
Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1-x)O2 during suboxide molecular beam epitaxy
Wenshan Chen, Kingsley Egbo, Joe Kler +3
Rutile GeO is a promising ultra-wide bandgap semiconductor for future power electronic devices whose alloy with the wide bandgap semiconductor rutile-SnO enables bandgap en…
physics.app-ph2023
Phase-selective growth of - vs -GaO and (InGa)O by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy
A. Ardenghi, O. Bierwagen, J. Lähnemann +4
Its piezo- and potentially ferroelectric properties make the metastable kappa polymorph of GaO an interesting material for multiple applications, while In-incorporation int…