5 citations · 8 across the 5 of their papers we have counts for
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Dilute-Limit Defect Displacements Enabled by Brillouin-Zone Sampling
Mark E. Turiansky, John L. Lyons, Noam Bernstein
Defects and their interaction with the semiconductor host lattice play an essential role in a variety of technologies. When a defect transitions between two electronic states, the…
Charge-state control of carbon-related optical absorption in AlN
Helen C. Robinson, Daniil Danilin, Md Shafiqul Islam Mollik +5
Sub-bandgap optical absorption in AlN between 2 eV and 4 eV is widely observed, but its microscopic origin remains contested. Using photo-induced electron paramagnetic resonance (p…
Self-compensation by silicon centers in ultrawide-bandgap nitrides
John L. Lyons, Darshana Wickramaratne
\textit{DX} behavior limits -type carrier concentrations in ultrawide-bandgap nitrides such as aluminum nitride (AlN) and cubic boron nitride (-BN). Instead of acting as effe…
Machine Learning Phonon Spectra for Fast and Accurate Optical Lineshapes of Defects
Mark E. Turiansky, John L. Lyons, Noam Bernstein
The optical properties of defects in solids produce rich physics, from gemstone coloration to single-photon emission for quantum networks. Essential to describing optical transitio…
Approximate Excited-State Potential Energy Surfaces for Defects in Solids
Mark E. Turiansky, John L. Lyons
A description of electron-phonon coupling at a defect or impurity is essential to characterizing and harnessing its functionality for a particular application. Electron-phonon coup…