1 citations · 1 across the 7 of their papers we have counts for
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A FeFET Voltage-to-Time Converter with Offset Trim by Programmed Multilevel State in 28-nm CMOS
Jeries Mattar, Hanaa Eqeiq, Stefan Dünkel +4
The offset and gain of voltage-to-time converters (VTCs) in time-domain circuits vary with process, supply, and temperature. This work presents a VTC whose nonvolatile input-referr…
Probabilistic Tree Inference Enabled by FDSOI Ferroelectric FETs
Pengyu Ren, Xingtian Wang, Boyang Cheng +9
Artificial intelligence applications in autonomous driving, medical diagnostics, and financial systems increasingly demand machine learning models that can provide robust uncertain…
Cryogenic Characterization of Ferroelectric Non-volatile Capacitors
Madhav Vadlamani, Dyutimoy Chakraborty, Jianwei Jia +5
Ferroelectric-based capacitive crossbar arrays have been proposed for energy-efficient in-memory computing in the charge domain. They combat the challenges like sneak paths and hig…
A Bio-inspired Asymmetric Double-Gate Ferroelectric FET for Emulating Astrocyte and Dendrite Dynamics in Neuromorphic Systems
Zhouhang Jiang, A N M Nafiul Islam, Zhuangyu Han +13
Neuromorphic systems seek to replicate the functionalities of biological neural networks to attain significant improvements in performance and efficiency of AI computing platforms.…
A Reconfigurable Time-Domain In-Memory Computing Macro using FeFET-Based CAM with Multilevel Delay Calibration in 28 nm CMOS
Jeries Mattar, Mor M. Dahan, Stefan Dunkel +5
Time-domain nonvolatile in-memory computing (TD-nvIMC) offers a promising pathway to reduce data movement and improve energy efficiency by encoding computation in delay rather than…
Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate
Zijian Zhao, Sola Woo, Khandker Akif Aabrar +22
In this work, we propose a dual-port cell design to address the pass disturb in vertical NAND storage, which can pass signals through a dedicated and string-compatible pass gate. W…