49 citations · 115 across the 6 of their papers we have counts for
4 papers · 1 filter
Reduced Variability in Threshold Switches Using Heterostructures of SiO and Vertically Aligned MoS
Jimin Lee, Rana Walied Ahmad, Sofía Cruces +7
Layered two-dimensional (2D) materials provide unique structural features, such as physical gaps between their layers that are only connected through van der Waals (vdW) forces. Th…
Volatile MoS Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications
Sofia Cruces, Mohit D. Ganeriwala, Jimin Lee +12
Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed f…
Tunable Doping and Mobility Enhancement in 2D Channel Field-Effect Transistors via Damage-Free Atomic Layer Deposition of AlOX Dielectrics
Ardeshir Esteki, Sarah Riazimehr, Agata Piacentini +14
Two-dimensional materials (2DMs) have been widely investigated because of their potential for heterogeneous integration with modern electronics. However, several major challenges r…
Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes
Lukas Völkel, Dennis Braun, Melkamu Belete +8
The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical pr…