1 citations · 1 across the 2 of their papers we have counts for
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No band gap, no problem: Defects in InAs using a band-avoiding occupation-constrained density functional theory
Peter A. Schultz, Arthur H. Edwards, Evan M. Anderson +2
Density functional theory (DFT) underestimates the experimental band gap---the infamous band gap problem. As the band gap defines the energy scale of defect levels, this complicate…
An Atomistically Informed Device Engineering (AIDE) Method Realized: A case study in GaAs
Leopoldo Diaz, Harold P. Hjalmarson, Jesse J. Lutz +1
Radiation-induced defects can have a significant impact on the longevity and performance of semiconductor devices. We present an Atomistically Informed Device Engineering (AIDE) me…
The case of the missing gallium vacancy in gallium arsenide: A multiscale explanation
Leopoldo Diaz, Harold P. Hjalmarson, Jesse J. Lutz +1
Irradiation of gallium arsenide (GaAs) produces immobile vacancies and mobile interstitials. However, after decades of experimental investigation, the immobile Ga vacancy eludes ob…