1 citations · 1 across the 1 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2025
An Atomistically Informed Device Engineering (AIDE) Method Realized: A case study in GaAs
Leopoldo Diaz, Harold P. Hjalmarson, Jesse J. Lutz +1
Radiation-induced defects can have a significant impact on the longevity and performance of semiconductor devices. We present an Atomistically Informed Device Engineering (AIDE) me…
cond-mat.mtrl-sci2025★ 1 cited
The case of the missing gallium vacancy in gallium arsenide: A multiscale explanation
Leopoldo Diaz, Harold P. Hjalmarson, Jesse J. Lutz +1
Irradiation of gallium arsenide (GaAs) produces immobile vacancies and mobile interstitials. However, after decades of experimental investigation, the immobile Ga vacancy eludes ob…