1 citations · 1 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2025
Elimination of the acoustoelectric domain and increasing of the emission intensity by means of shunting the lateral current in the InGaAs/GaAs heterostructures
P. A. Belevskii, M. N. Vinoslavskii, O. S. Pylypchuk
There has been experimentally implemented a technique of neutralization of an acoustoelectric domain under the conditions of the lateral transport of charge carriers in strong elec…
cond-mat.mes-hall2021★ 1 cited
Resistive switching effect in the n-InGaAs/GaAs heterostructures with double tunnel-coupled quantum wells
P. A. Belevskii, M. N. Vinoslavskii, V. V. Vainberg +2
The electric conductivity behavior in the single and double tunnel-coupled quantum wells (QW) with different doping profile caused by impact of short pulses of the strong longitudi…