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20232026
most citedCryogenic Multiplexing with Bottom-Up Nanowires

10 citations · 18 across the 10 of their papers we have counts for

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cond-mat.mes-hall2026

Tomography of Transport Pathways in Selective-Area-Grown Nanowires Using Angle-Resolved Conductance Fluctuations

Christian E. N. Petersen, Damon J. Carrad, Daria Beznasyuk +1

Understanding the spatial distribution of carriers is important for interpreting transport in nanoscale devices. Here, we apply conductance fluctuation tomography to planar selecti…

cond-mat.mes-hall2025

Cryogenic performance of field-effect transistors and amplifiers based on selective area grown InAs nanowires

Giulia Meucci, Dags Olšteins, Damon J. Carrad +6

Indium-Arsenide (InAs) nanowire field-effect transistors (NWFETs) are promising platforms for high-speed, low-power nanoelectronics operating at cryogenic conditions, relevant for…

cond-mat.mes-hall2025

Gradient Electronic Landscapes in van der Waals Heterostructures

Nolan Lassaline, Camilla H. Sørensen, Giulia Meucci +7

Two-dimensional (2D) materials such as graphene and hexagonal boron nitride (hBN) provide a versatile platform for quantum electronics. Experiments generally require encapsulating…

cond-mat.mes-hall2025

: A Method for Extracting the Density Dependent Mobility in Two-Terminal Nanodevices

Christian E. N. Petersen, Damon J. Carrad, Thierry Désiré +6

Measuring carrier mobility as a function of the carrier density in semiconductors using Hall effect is the gold standard for quantifying scattering mechanisms. However, for nanostr…

cond-mat.mes-hall2023★ 10 cited

Cryogenic Multiplexing with Bottom-Up Nanowires

Dāgs Olšteins, Gunjan Nagda, Damon J. Carrad +5

Bottom-up grown nanomaterials play an integral role in the development of quantum technologies. Among these, semiconductor nanowires (NWs) are widely used in proof-of-principle exp…