3 citations · 4 across the 5 of their papers we have counts for
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Growth and Interface Engineering of Superconducting TiN on Sapphire by Thermal-Laser Epitaxy
Anthony Hyatt, Anand Ithepalli, Eegene Clara Chung +6
Thermal-laser epitaxy (TLE) extends the accessible pressure, temperature, and growth-rate regimes of conventional molecular-beam epitaxy, enabling in situ laser annealing, high-pur…
High-Q superconducting microwave resonators using MBE titanium nitride
Anand Ithepalli, Haoran Lu, Eegene Clara Chung +9
Using molecular beam epitaxy, we have realized thin films of titanium nitride (TiN) on c-plane sapphire that exhibit the lowest observed full-width at half maximum X-ray rocking cu…
Effect of substrate miscut angle on critical thickness, structural and electronic properties of MBE-grown NbN films on c-plane sapphire
Anand Ithepalli, Saumya Vashishtha, Naomi Pieczulewski +7
We report the structural and electronic properties of niobium nitride (NbN) thin films grown by molecular beam epitaxy on c-plane sapphire with miscut angles of , $2^…
Growth and characterization of single crystal cubic TaN and hexagonal TaN films on c-plane Sapphire
Anand Ithepalli, Amit Rohan Rajapurohita, Arjan Singh +7
Two single crystal phases of tantalum nitride were stabilized on c-plane sapphire using molecular beam epitaxy. The phases were identified to be -TaN with a rocksalt cubic struc…