7 papers
Nature of the 175-180 cm Raman Feature in Altermagnetic -MnTe
Pankaj Bhardwaj, Rajib Sarkar, Naresh Shyaga +6
The 175 cm Raman mode in -MnTe has long been assigned to the material's only symmetry-allowed phonon (), yet first-principles calculations consistently place this…
Operando Surface Probe Microscopy Reveals Electrochemical Origins of Reliability Variability in Hafnia Ferroelectrics
Anudeep Tullibilli, Kartick Biswas, Shubham Kumar Parate +1
Device-to-device and sample-to-sample variability remains a major obstacle to the reliable implementation of hafnia-based ferroelectrics, even in nominally identical structures fab…
Interplay of spin-lattice and electronic coupling far above Neel ordering in 2D antiferromagnetic CrPS4 and its interface manifestation
Divya Jangra, Binoy Krishna De, Mukesh Kumar Dasoundhi +13
A short-range spin correlation driven, strongly intercoupled spin-phonon-electronic state far above TN (~38K) is identified in the low dimensional van der Waals antiferromagnet CrP…
Room-Temperature Electric-Field Control of Anomalous Hall Effect in Py/BTO/LSMO Heterostructures
Kusampal Yadav, Kousik Das, Aditya Raj +7
We demonstrate room temperature electric field control of the anomalous Hall effect in epitaxial Ni80Fe20 (Py) BaTiO3 (BTO) La0.7Sr0.3MnO3 (LSMO) thin film heterostructures grown o…
Interfacial and bulk switching MoS2 memristors for an all-2D reservoir computing framework
Asmita S. Thool, Sourodeep Roy, Prahalad Kanti Barman +5
In this study, we design a reservoir computing (RC) network by exploiting short- and long-term memory dynamics in Au/Ti/MoS/Au memristive devices. The temporal dynamics is engi…
Reactive Glass Metal Interaction under Ambient Conditions Enables Surface Modification of Gold Nanoislands
Sinorul Haque, Shweta R. Keshri, G. Ganesh +13
Stabilizing gold nanoparticles with tunable surface composition via reactive metal support interactions under ambient conditions remains a significant challenge. We discovered that…
Epitaxial growth and stabilization of perovskite phase EuNiO3 thin films through RF sputtering
Prashanth S, Binoy Krishna De, Shubham Kumar Parate +2
Phase change materials (PCMs) that exhibit volatile resistive switching are promising for emulating neuronal oscillators. Charge transfer insulators, such as ReNiO3 (where Re repre…