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researcher

X. Xiu

9 papers hereh-index 201.5k citations118 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author7
  • last author1

Across the 8 of 9 papers where every author was matched, so the position is known.

fields
  • quant-ph6
  • cond-mat.mtrl-sci3
same name
  • X. Xiu — 6 papers, h 19

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20132025
most citedFirst principles calculations of the interface properties of amorphous-Al2O3/MoS2 under non-strain and biaxial strain conditions

33 citations · 72 across the 9 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

3 papers · 1 filter

cond-mat.mtrl-sci2024★ 1 cited

Million-atom heat transport simulations of polycrystalline graphene approaching first-principles accuracy enabled by neuroevolution potential on desktop GPUs

Xiaoye Zhou, Yuqi Liu, Benrui Tang +5

First-principles molecular dynamics simulations of heat transport in systems with large-scale structural features are challenging due to their high computational cost. Here, using…

cond-mat.mtrl-sci2017

Investigation of interface spacing, stability, band offsets and electronic properties on (001) SrHfO3/GaAs interface : First principles calculations

Li-Bin Shi, Xiao-Ming Xiu, Xu-Yang Liu +3

SrHfO3 is a potential dielectric material for metal-oxide-semiconductor (MOS) devices. SrHfO3/GaAs interface has attracted attention due to its unique properties. In this paper, th…

cond-mat.mtrl-sci2017★ 33 cited

First principles calculations of the interface properties of amorphous-Al2O3/MoS2 under non-strain and biaxial strain conditions

Li-Bin Shi, Ming-Biao Li, Xiao-Ming Xiu +5

Al2O3 is a potential dielectric material for metal-oxide-semiconductor (MOS) devices. Al2O3 films deposited on semiconductors usually exhibit amorphous due to lattice mismatch. Com…

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