84 citations · 84 across the 4 of their papers we have counts for
4 papers
Tuning Breakdown-to-Coercive Field Ratio in Ultra-Thin Al1-xScxN Films via Reactive Nitrogen Atmosphere
Yinuo Zhang, Walter J. Smith, Giovanni Esteves +3
Al1-xScxN has attracted significant interest due to its large remnant polarization and low processing temperature when compared to other ferroelectric material systems. However, de…
Low-Field Ferroelectricity in 10 nm AlBScN Thin Films
Xiaolei Tong, Pedram Yousefian, Ziyi Wang +5
Ferroelectric aluminum scandium nitride (Al1-xScxN, AlScN) offers CMOS-compatible integration but suffers from high coercive fields and leakage currents that hinder thickness scali…
Coercive Field Reduction in Ultra-thin Al1-XScXN via Interfacial Engineering with a Scandium Electrode
Yinuo Zhang, Rajeev Kumar Rai, Giovanni Esteves +4
Aluminum scandium nitride (AlScN) ferroelectrics are promising for next-generation non-volatile memory applications due to high remnant polarization compared with Pb(ZrxTi1-x)O3 an…
Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes
Xiwen Liu, John Ting, Yunfei He +11
The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing…