5 papers · 1 filter
Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
Chloe Leblanc, Hyunmin Cho, Yinuo Zhang +7
The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data proces…
Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes
Xiwen Liu, John Ting, Yunfei He +11
The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing…
Multistate ferroelectric diodes with high electroresistance based on van der Waals heterostructures
Soumya Sarkar, Zirun Han, Maheera Abdul Ghani +5
Some van der Waals (vdW) materials exhibit ferroelectricity, making them promising for novel non-volatile memories (NVMs) such as ferroelectric diodes (FeDs). CuInP2S6 (CIPS) is a…
High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities
Seunguk Song, Kwan-Ho Kim, Rachael Keneipp +7
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-gene…
2D ferroelectrics and ferroelectrics with 2D: materials and device prospects
Chloe Leblanc, Seunguk Song, Deep Jariwala
Ferroelectric and two-dimensional materials are both heavily investigated classes of electronic materials. This is unsurprising since they both have superlative fundamental propert…