7 papers
Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN
Zekun Hu, Haiwen Zhang, Rajeev Kumar Rai +12
Ferroelectric AlScN is promising for CMOS-compatible non-volatile memory, but thickness scaling is limited by leakage, premature breakdown, and defect-mediated failure. Here we sho…
Controlled non-volatile modulation of optical dispersion in monolayer tungsten disulfide via ferroelectric polarization patterning
Yuhong Cao, Zekun Hu, Jason Lynch +7
The manipulation of optical properties, including reflection, refraction, polarization, phase, and frequency, has long been central to advancing photonic and optoelectronic technol…
Tuning Breakdown-to-Coercive Field Ratio in Ultra-Thin Al1-xScxN Films via Reactive Nitrogen Atmosphere
Yinuo Zhang, Walter J. Smith, Giovanni Esteves +3
Al1-xScxN has attracted significant interest due to its large remnant polarization and low processing temperature when compared to other ferroelectric material systems. However, de…
Demonstration of highly scaled AlScN ferroelectric diode memory with storage density > 100 Mbit/mm
Zekun Hu, Hyunmin Cho, Rajeev Kumar Rai +13
Wurtzite nitride ferroelectric materials have emerged as promising candidates for next-generation memory applications due to their exceptional polarization properties and compatibi…
Hydrazine-Free Precursor for Solution-Processed All-Inorganic Se and Se1-xTex Photovoltaics
Adam D. Alfieri, Swarnendu Das, Kim Kisslinger +5
Selenium (Se) has reemerged as a promising absorber material for indoor and tandem photovoltaics (PVs), and its alloys with Te (Se1-xTex) offer a widely tunable bandgap. Solution p…
Write Cycling Endurance Exceeding 1010 in Sub-50 nm Ferroelectric AlScN
Hyunmin Cho, Yubo Wang, Chloe Leblanc +5
Wurtzite ferroelectrics, particularly aluminum scandium nitride (AlScN), have emerged as a promising materials platform for nonvolatile memories, offering high polarization values…