5 papers
Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN
Zekun Hu, Haiwen Zhang, Rajeev Kumar Rai +12
Ferroelectric AlScN is promising for CMOS-compatible non-volatile memory, but thickness scaling is limited by leakage, premature breakdown, and defect-mediated failure. Here we sho…
Demonstration of highly scaled AlScN ferroelectric diode memory with storage density > 100 Mbit/mm
Zekun Hu, Hyunmin Cho, Rajeev Kumar Rai +13
Wurtzite nitride ferroelectric materials have emerged as promising candidates for next-generation memory applications due to their exceptional polarization properties and compatibi…
Write Cycling Endurance Exceeding 1010 in Sub-50 nm Ferroelectric AlScN
Hyunmin Cho, Yubo Wang, Chloe Leblanc +5
Wurtzite ferroelectrics, particularly aluminum scandium nitride (AlScN), have emerged as a promising materials platform for nonvolatile memories, offering high polarization values…
Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
Chloe Leblanc, Hyunmin Cho, Yinuo Zhang +7
The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data proces…
Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 °C
Yunfei He, David C. Moore, Yubo Wang +9
Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, w…