6 papers
Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN
Zekun Hu, Haiwen Zhang, Rajeev Kumar Rai +12
Ferroelectric AlScN is promising for CMOS-compatible non-volatile memory, but thickness scaling is limited by leakage, premature breakdown, and defect-mediated failure. Here we sho…
Controlled non-volatile modulation of optical dispersion in monolayer tungsten disulfide via ferroelectric polarization patterning
Yuhong Cao, Zekun Hu, Jason Lynch +7
The manipulation of optical properties, including reflection, refraction, polarization, phase, and frequency, has long been central to advancing photonic and optoelectronic technol…
Demonstration of highly scaled AlScN ferroelectric diode memory with storage density > 100 Mbit/mm
Zekun Hu, Hyunmin Cho, Rajeev Kumar Rai +13
Wurtzite nitride ferroelectric materials have emerged as promising candidates for next-generation memory applications due to their exceptional polarization properties and compatibi…
Kilobyte-Scale, Selector-Free, Temperature-Hard AlScN Ferroelectric Diode Crossbar Arrays
Zirun Han, Chao-Chuan Chen, Dhiren K. Pradhan +12
We report the fabrication and characterization of kilobyte-scale, selector-free, ferroelectric (FE) diode crossbar memory arrays based on aluminum scandium nitride (AlScN). Utilizi…
Write Cycling Endurance Exceeding 1010 in Sub-50 nm Ferroelectric AlScN
Hyunmin Cho, Yubo Wang, Chloe Leblanc +5
Wurtzite ferroelectrics, particularly aluminum scandium nitride (AlScN), have emerged as a promising materials platform for nonvolatile memories, offering high polarization values…
Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
Chloe Leblanc, Hyunmin Cho, Yinuo Zhang +7
The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data proces…