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cond-mat.mtrl-sci2009

Pattern formation in SiSb system

A. Csik, G. Erdelyi, G. A. Langer +4

Thermal annealing of Si/Si1-xSbx/Si amorphous thin film tri-layer samples (x=18 and 24 at%Sb) under 100 bar Ar pressure results in an interesting pattern formation. In pictures, ta…

cond-mat.mtrl-sci2009

Investigation of Sb diffusion in amorphous silicon

A. Csik, G. A. Langer, G. Erdelyi +3

Amorphous silicon materials and its alloys become extensively used in some technical applications involving large area of the microelectronic and optoelectronic devices. However, t…

cond-mat.mtrl-sci2009

Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments

C. Frigeri, M. Serenyi, A. Csik +3

A study is presented of the structural changes occurring as a function of the annealing conditions in hydrogenated amorphous Si/Ge multilayers prepared by sputtering. Annealing cha…

cond-mat.mtrl-sci200911 cited

AFM and TEM study of hydrogenated sputtered Si/Ge multilayers

C. Frigeri, L. Nasi, M. Serenyi +3

Multilayers of hydrogenated ultrathin (3 nm) amorphous a-Si and a-Ge layers prepared by sputtering have been studied by atomic force microscopy (AFM) and transmission electron micr…

cond-mat.mtrl-sci2009

Investigation of thermal stability of hydrogenated amorphous Si/Ge multilayers

A. Csik, M. Serenyi, Z. Erdelyi +6

Thermal stability of hydrogenated amorphous Si/Ge multilayers has been investigated by Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Small-Angle X-…