3 papers
cond-mat.mes-hall2025
Protected valley splitting against interface disorder toward scalable silicon electron spin qubits
Yang Liu, Gang Wang, Shan Guan +2
Regardless of various material design strategies, experimentally achieving substantial and controllable valley splitting in Si/SiGe quantum wells remains a central challenge for en…
cond-mat.mtrl-sci2025
Unified interface dipole theory for Fermi level pinning effect at metal-semiconductor contacts
Ziying Xiang, Jun-Wei Luo, Shu-Shen Li
We present a unified bond dipole theory for metal-semiconductor interfaces to explain the microscopic origin of interface dipoles and Fermi level pinning (FLP) in terms of Harrison…
cond-mat.mtrl-sci2024
Self-passivation reduces the Fermi level pinning in the metal-semiconductor contacts
Ziying Xiang, Jun-Wei Luo, Shu-Shen Li
The metal-induced gap states (MIGS) are commonly believed to cause the strong Femi level pinning (FLP) in the metal-semiconductors contacts. Here, we unravel unambiguously that the…