activity
20242026
most citedThe photoinduced hidden metallic phase of monoclinic VO2 driven by local nucleation via a self-amplification process

21 citations · 21 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2026

Superfast hole spin qubits enabled by uniaxial strain-boosted spin-orbit coupling

Yi-Xu Wang, Yang Liu, Shan Guan +2

Two-dimensional (2D) electron/hole gases confined in semiconductor heterostructures suffer from weak Rashba spin-orbit coupling (SOC) for manipulating spin degreee of freedom via a…

cond-mat.mes-hall2025

Protected valley splitting against interface disorder toward scalable silicon electron spin qubits

Yang Liu, Gang Wang, Shan Guan +2

Regardless of various material design strategies, experimentally achieving substantial and controllable valley splitting in Si/SiGe quantum wells remains a central challenge for en…

cond-mat.mtrl-sci2025

Unified interface dipole theory for Fermi level pinning effect at metal-semiconductor contacts

Ziying Xiang, Jun-Wei Luo, Shu-Shen Li

We present a unified bond dipole theory for metal-semiconductor interfaces to explain the microscopic origin of interface dipoles and Fermi level pinning (FLP) in terms of Harrison…

cond-mat.mtrl-sci2025

Ultrafast dynamics of atomic correlated disordering in photoinduced VO

Wen-Hao Liu, Feng-Wu Guo, Lin-Wang Wang +1

Recent experiments suggest that atomic disordering dynamics are more universal than conventional coherent processes in photoinduced phase transitions (PIPTs), yet its mechanism rem…

cond-mat.mtrl-sci2024

Self-passivation reduces the Fermi level pinning in the metal-semiconductor contacts

Ziying Xiang, Jun-Wei Luo, Shu-Shen Li

The metal-induced gap states (MIGS) are commonly believed to cause the strong Femi level pinning (FLP) in the metal-semiconductors contacts. Here, we unravel unambiguously that the…

cond-mat.mtrl-sci2024★ 21 cited

The photoinduced hidden metallic phase of monoclinic VO2 driven by local nucleation via a self-amplification process

Feng-Wu Guo, Wen-Hao Liu, Zhi Wang +3

The insulator-to-metal transition (IMT) in vanadium dioxide (VO2) has garnered extensive attention for its potential applications in ultrafast switches, neuronal network architectu…