2 citations · 3 across the 7 of their papers we have counts for
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Spin-Dependent Charge-State Conversion in NV Ensembles Mediated by Electron Tunneling
Neil B. Manson, Morgan Hedges, Michael S. J. Barson +3
The nitrogen-vacancy (NV) center in diamond enables optical initialization and readout of its electronic spin, forming the basis of a wide range of quantum sensing and metrology ap…
Unraveling the electronic structure of silicon vacancy centers in 4H-SiC
Ali Tayefeh Younesi, Minh Tuan Luu, Christopher Linderälv +7
Point defects in silicon carbide (SiC), particularly the negatively-charged silicon vacancy () in 4H-SiC, are leading candidates for scalable quantum technolog…
Impact of strain on electron-phonon coupling of quantum emitters
Vytautas Žalandauskas, Rokas Silkinis, Lukas Razinkovas +6
Defects in semiconductors acting as optically active spin qubits are intriguing objects of fundamental study and future technological developments. These defect-based color centers…