3 papers
cond-mat.str-el2025
Accurate prediction of macroscopic transport from microscopic imaging via critical fractals at the Mott transition
P. -Y. Chen, A. R. Rajapurohita, M. Alzate Banguero +7
Vanadium dioxide (VO) exhibits hysteresis in resistance while undergoing a thermally driven insulator-metal transition (IMT). Understanding the nonequilibrium effects in resist…
cond-mat.mtrl-sci2025
Effects of Interactions and Defect Motion on Ramp Reversal Memory in Locally Phase Separated Materials
Y. Sun, M. Alzate Banguero, P. Salev +4
The ramp-reversal memory (RRM) effect in metal-insulator transition metal oxides (TMOs), a non-volatile resistance change induced by repeated temperature cycling, has attracted con…
cond-mat.mtrl-sci2025
Memory in strain-tuned insulator-metal-insulator sequence of transitions after photoexcitation in the Mott material V2O3
O. Yu. Gorobtsov, Y. Kalcheim, Z. Shao +9
Memory effects during metal-insulator transitions in quantum materials reveal complex physics and potential for novel electronics mimicking biological neural systems. Nonetheless,…