1 citations · 1 across the 2 of their papers we have counts for
3 papers
Accurate Modeling of Gate Leakage Currents in SiC Power MOSFETs
Ang Feng, Alexander Karl, Dominic Waldhör +3
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer fr…
Resonant states and nuclear dynamics in solid-state systems: the case of silicon-hydrogen bond dissociation
Woncheol Lee, Mark E. Turiansky, Dominic Waldhör +3
Bond breaking in the presence of highly energetic carriers is central to many important phenomena in physics and chemistry, including radiation damage, hot-carrier degradation, act…
Modeling the Initial Stages of Si(100) Thermal Oxidation: An Ab-initio Approach
Lukas Cvitkovich, Dominic Waldhör, Al-Moatassem El-Sayed +3
Silicon together with its native oxide SiO was recognized as an outstanding material system for the semiconductor industry in the 1950s. In state-of-the-art device technology,…