39 citations · 41 across the 3 of their papers we have counts for
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Origin of shallow n-type doping in AlN and Al-rich AlGaN
Yujie Liu, Sieun Chae, Emmanouil Kioupakis
Achieving efficient n-type doping in AlN, a representative ultrawide bandgap (UWBG) semiconductor, remains a longstanding challenge that limits its application in high-power electr…
Electronic structure and defect properties of Bi-doped GaN: origins of photoluminescence and optical absorption
Yujie Liu, Ishtiaque Ahmed Navid, Zetian Mi +1
Extreme lattice-mismatched III-V nitrides, such as Bi-incorporated GaN, have been realized experimentally thanks to recent advances in epitaxial growth and characterization techniq…
Selective incorporation of antimony into gallium nitride
Yujie Liu, Ishtiaque Ahmed Navid, Zetian Mi +1
Dilute concentrations of antimony (Sb) incorporation into GaN induce strong band-gap bowing and tunable room-temperature photoluminescence from the UV to the green spectral regions…
Electric-Field-Induced Domain Walls in Wurtzite Ferroelectrics
Ding Wang, Danhao Wang, Mahlet Molla +8
Wurtzite ferroelectrics possess transformative potential for next-generation microelectronics. A comprehensive understanding of their ferroelectric properties and domain energetics…