activity
20232025
most citedEnlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2

1 citations · 1 across the 5 of their papers we have counts for

collaborators
Showing physics.app-phShow all

2 papers · 1 filter

physics.app-ph2025

Investigation of the Physical Mechanism behind Retention Loss in FeFETs with MIFIFIS Gate Structure

Tao Hu, Zeqi Chen, Runhao Han +19

A Metal-Gate Blocking Layer (GBL)- Ferroelectric-Tunnel Dielectric Layer (TDL)-Ferroelectric -Channel Insulator (Ch.IL)-Si (MIFIFIS) structure is proposed to achieve a larger MW fo…

physics.app-ph2024

Impact of Top SiO2 interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure

Tao Hu, Xianzhou Shao, Mingkai Bai +13

We study the impact of top SiO2 interlayer thickness on memory window of Si channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) gate structure. The memory window increases wit…