Su-Huai Wei

activity

20242026

E_{γ}^{'}

Defect Generation in Ionizing-irradiated

a

-SiO

_{2}

: The Nonradiative Carrier Capture-Structural Relaxation Model

7 citations · 7 across the 6 of their papers we have counts for

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cond-mat.mtrl-sci2024★ 7 cited

Mechanism of $E_{γ}^{'}$ Defect Generation in Ionizing-irradiated $a$ -SiO $_{2}$ : The Nonradiative Carrier Capture-Structural Relaxation Model

Yu Song, Chen Qiu, Su-Huai Wei

The total ionizing dose (TID) effect of semiconductor devices stems from radiation-induced $E_{γ}^{'}$ defects in the $a$ -SiO $_{2}$ dielectrics, but the conventional ``hole transport-trap…

Mechanism of Eγ′​ Defect Generation in Ionizing-irradiated a-SiO2​: The Nonradiative Carrier Capture-Structural Relaxation Model

Mechanism of $E_{γ}^{'}$ Defect Generation in Ionizing-irradiated $a$ -SiO $_{2}$ : The Nonradiative Carrier Capture-Structural Relaxation Model