3 papers
cond-mat.mes-hall2026
Ultralow p-type contact resistance for ultra-nanoscaled 2D-materials transistors
Ying Xiong, Tong Su, Qiang Li +3
High contact resistance is one of the main bottlenecks for practical two-dimensional (2D) materials transistors, especially for p-type transistors and future 2D ultra-nanoscaled (s…
cond-mat.mtrl-sci2025
Computational Design of Two-Dimensional MoSiN Family Field-Effect Transistor for Future à ngström-Scale CMOS Technology Nodes
Che Chen Tho, Zongmeng Yang, Shibo Fang +9
Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angström-scale technology nodes is expected to involve alternative semiconductor channel mate…
cond-mat.mtrl-sci2025
Pressure-Driven Metallicity in à ngström-Thickness 2D Bismuth and Layer-Selective Ohmic Contact to MoS2
Shuhua Wang, Shibo Fang, Qiang Li +8
Recent fabrication of two-dimensional (2D) metallic bismuth (Bi) via van der Waals (vdW) squeezing method opens a new avenue to ultrascaling metallic materials into the Ã¥ngström-…