1 citations · 1 across the 4 of their papers we have counts for
4 papers
Electrical Characterization of High-k (k>115) Crystalline SrTiO3 (STO) thin film integration with GaN with Nanomembrane Transfer Process
Md Tahmidul Alam, Kyoungjun Lee, Guangying Wang +2
High-k (115), crystalline SrTiO3 (STO) thin film was transferred on GaN for potential applications in power devices (transistor and diodes) by nanomembrane transfer method and the…
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
Md Tahmidul Alam, Swarnav Mukhopadhyay, Md Mobinul Haque +2
More than 3 kV breakdown voltage was demonstrated in monolithic bidirectional GaN HEMTs for the first time having potential applications in 1200V or 1700V-class novel power convert…
High Voltage (~2 kV) field-plated Al0.64Ga0.36N-channel HEMTs
Md Tahmidul Alam, Jiahao Chen, Kenneth Stephenson +5
High voltage (~2 kV) AlGaN-channel HEMTs were fabricated with 64% Aluminum composition in the channel. The average on-resistance was ~75 ohm. mm (~21 miliohm. cm^2) for LGD = 20 mi…
Comprehensive TCAD Simulation Study of High Voltage (>650V) Common Drain Bidirectional AlGaN/GaN HEMTs
Md Tahmidul Alam, Chirag Gupta
A broad TCAD simulation analysis of a monolithic common drain bidirectional GaN HEMT was performed. We used gate-to-gate distances of 4 microns and 6 microns for the devices optimi…