S. Pasayat

activity

20232025

most citedCrack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance

9 citations · 10 across the 8 of their papers we have counts for

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3 papers · 1 filter

cond-mat.mtrl-sci2023

Band alignment of grafted monocrystalline Si (001)/ $β$ -Ga $_{2}$ O $_{3}$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Jiarui Gong, Jie Zhou, Ashok Dheenan +11

Beta-phase gallium oxide ( $β$ -Ga $_{2}$ O $_{3}$ ) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates.…

physics.app-ph2023

Monocrystalline Si/ $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction diodes fabricated via grafting

Jiarui Gong, Donghyeok Kim, Hokyung Jang +19

The $β$ -Ga $_{2}$ O $_{3}$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices…

physics.app-ph2023★ 9 cited

Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance

Swarnav Mukhopadhyay, Cheng Liu, Jiahao Chen +5

In this article, high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 Ω/ \Box ) is repor…

Band alignment of grafted monocrystalline Si (001)/β-Ga2​O3​ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Monocrystalline Si/β-Ga2​O3​ p-n heterojunction diodes fabricated via grafting

Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance

Band alignment of grafted monocrystalline Si (001)/ $β$ -Ga $_{2}$ O $_{3}$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Monocrystalline Si/ $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction diodes fabricated via grafting