9 citations · 10 across the 9 of their papers we have counts for
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Demonstration of high output power (3.75 W/mm) with 31.8% PAE in Ga-Polar AlGaN/GaN HEMTs on sapphire at 94 GHz
Ruixin Bai, Swarnav Mukhopadhyay, Michael Elliott +12
In this work, a recessed-gate Ga-polar AlGaN/GaN high-electron-mobility transistor (HEMT) on sapphire incorporating an AlGaN back-barrier for W-band operation is demonstrated. The…
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
Ruixin Bai, Swarnav Mukhopadhyay, Michael Elliott +9
In this work, we demonstrate a passivation-free Ga-polar recessed-gate AlGaN/GaN HEMT on a sapphire substrate for W-band operation, featuring a 5.5 nm Al0.35Ga0.65N barrier under t…
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
Md Tahmidul Alam, Swarnav Mukhopadhyay, Md Mobinul Haque +2
More than 3 kV breakdown voltage was demonstrated in monolithic bidirectional GaN HEMTs for the first time having potential applications in 1200V or 1700V-class novel power convert…
Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with free carrier concentration using close-coupled showerhead MOCVD reactor
Swarnav Mukhopadhyay, Parthasarathy Seshadri, Mobinul Haque +6
Thin Si-doped Al-rich (Al>0.85) regrown Al(Ga)N layers were deposited on AlN on Sapphire template using metal-organic chemical vapor deposition (MOCVD) techniques. The optimization…
High Voltage (~2 kV) field-plated Al0.64Ga0.36N-channel HEMTs
Md Tahmidul Alam, Jiahao Chen, Kenneth Stephenson +5
High voltage (~2 kV) AlGaN-channel HEMTs were fabricated with 64% Aluminum composition in the channel. The average on-resistance was ~75 ohm. mm (~21 miliohm. cm^2) for LGD = 20 mi…
Monocrystalline Si/-GaO p-n heterojunction diodes fabricated via grafting
Jiarui Gong, Donghyeok Kim, Hokyung Jang +19
The -GaO has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices…
Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance
Swarnav Mukhopadhyay, Cheng Liu, Jiahao Chen +5
In this article, high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 Ω/ \Box ) is repor…