9 citations · 9 across the 4 of their papers we have counts for
4 papers
Demonstration of high output power (3.75 W/mm) with 31.8% PAE in Ga-Polar AlGaN/GaN HEMTs on sapphire at 94 GHz
Ruixin Bai, Swarnav Mukhopadhyay, Michael Elliott +12
In this work, a recessed-gate Ga-polar AlGaN/GaN high-electron-mobility transistor (HEMT) on sapphire incorporating an AlGaN back-barrier for W-band operation is demonstrated. The…
Single-crystalline high-quality beta-Ga2O3 pseudo-substrate on sapphire through sputtering for epitaxial deposition
Guangying Wang, Shuwen Xie, William Brand +10
Solid-phase epitaxy (SPE) of beta-Ga2O3 thin films by radio-frequency (RF) sputtering and then crystallized through high-temperature post-deposition annealing is employed on sapphi…
Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with free carrier concentration using close-coupled showerhead MOCVD reactor
Swarnav Mukhopadhyay, Parthasarathy Seshadri, Mobinul Haque +6
Thin Si-doped Al-rich (Al>0.85) regrown Al(Ga)N layers were deposited on AlN on Sapphire template using metal-organic chemical vapor deposition (MOCVD) techniques. The optimization…
Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance
Swarnav Mukhopadhyay, Cheng Liu, Jiahao Chen +5
In this article, high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 Ω/ \Box ) is repor…