3 papers
physics.app-ph2026
Sub-Micron Gate FinFETs with Current Density 750 mA/mm and Ion/Ioff Ratio
Nabasindhu Das, Cameron Gorsak, Pushpanshu Tripathi +7
In this work, we demonstrate submicron-gate FinFETs that integrate Si delta-doped channels with selectively regrown n++ source/drain contacts. The devices employ 10…
physics.app-ph2025
Beta-Ga2O3 Sub-Micron FinFETs with Si Delta-Doped Channel Modulating Charge Density Above 3x10^13 cm^-2
Nabasindhu Das, Cameron Gorsak, Ankita Kashyap +6
This letter reports on the design and demonstration of high-performance Beta-Ga2O3 FinFETs utilizing MOCVD-grown Si delta-doped channels to achieve enhanced carrier transport and e…
cond-mat.mtrl-sci2024
In situ etching of \b{eta}-Ga2O3 using tert-butyl chloride in an MOCVD system
Cameron A. Gorsak, Henry J. Bowman, Katie R. Gann +9
In this study, we investigate in situ etching of \b{eta}-Ga2O3 in a metal-organic chemical vapor deposition (MOCVD) system using tert-Butyl chloride (TBCl). We report the successfu…