Sub-Micron Gate $\beta -G{a}_2{O}_3$ FinFETs with Current Density $>$ 750 mA/mm and Ion/Ioff Ratio $>$ $10^9$

Nabasindhu Das, Cameron Gorsak, Pushpanshu Tripathi +7

In this work, we demonstrate submicron-gate $\beta -G{a}_2{O}_3$ FinFETs that integrate Si delta-doped channels with selectively regrown n++ source/drain contacts. The devices employ 10…