1 citations · 1 across the 1 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2025★ 1 cited
Resistance Switching Properties of Stoichiometric and Nitrogen Implanted Silicon Nitride Nanolayers on N and P-Type Si Substrates
A. E. Mavropoulis, P. Karakolis, N. Vasileiadis +6
This paper examines the resistive switching characteristics of LPCVD SiNx MNOS ReRAM cells on both heavily doped n- and p-type silicon substrates, focusing on the effects of nitrog…
physics.app-ph2021
Multi-level resistance switching and random telegraph noise analysis of nitride based memristors
Nikolaos Vasileiadis, Panagiotis Loukas, Panagiotis Karakolis +7
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile me…