3 papers
cond-mat.mtrl-sci2025
Performance and reliability potential of BiOSe/BiSeO transistors
Mohammad Rasool Davoudi, Mina Bahrami, Axel Verdianu +16
While 2D materials have enormous potential for future device technologies, many challenges must be overcome before they can be deployed at an industrial scale. One of these challen…
cond-mat.mtrl-sci2025
Valley Splittings in Si/SiGe Heterostructures from First Principles
Lukas Cvitkovich, Tancredi Salamone, Christoph Wilhelmer +3
We compute valley splittings in Si/SiGe superlattices using ab initio density functional theory (DFT). This first-principle approach is expected to provide an excellent description…
physics.app-ph2025
How to Identify Suitable Gate Dielectrics for Transistors based on Two-Dimensional Semiconductors
Theresia Knobloch, Quentin Smets, Anton E. O. Persson +23
The recent progress in nanosheet transistors has established two-dimensional (2D) semiconductors as viable candidates for future ultra-scaled electronic devices. Next to reducing c…