36 citations · 37 across the 6 of their papers we have counts for
3 papers · 1 filter
Hysteresis Measurements as a Diagnostic Tool: A Systematic Approach for Stability Benchmarking and Performance Projection of 2D-Materials-Based MOSFETs
Alexander Karl, Dominic Waldhoer, Theresia Knobloch +19
Judging by its omnipresence in the literature, the hysteresis observed in the transfer characteristics of emerging transistors based on 2D-materials is widely accepted as an import…
How to Identify Suitable Gate Dielectrics for Transistors based on Two-Dimensional Semiconductors
Theresia Knobloch, Quentin Smets, Anton E. O. Persson +23
The recent progress in nanosheet transistors has established two-dimensional (2D) semiconductors as viable candidates for future ultra-scaled electronic devices. Next to reducing c…
Comphy v3.0 -- A Compact-Physics Framework for Modeling Charge Trapping Related Reliability Phenomena in MOS Devices
Dominic Waldhoer, Christian Schleich, Jakob Michl +9
Charge trapping plays an important role for the reliability of electronic devices and manifests itself in various phenomena like bias temperature instability (BTI), random telegrap…