1 citations · 2 across the 4 of their papers we have counts for
6 papers
Domain-wall-to-domain interconversion in a polar conducting oxide
Martin F. Sarott, Majid Ahmadi, Johanna van Gent González +13
Domain walls in ferroic crystals are topological defects with a symmetry distinct from the domain interior, allowing them to display functionalities that are otherwise forbidden in…
Computing at the Edge Enabled by Indoor Photovoltaics and Ferroelectrics
Robert L. Z. Hoye, Markus Hellenbrand, Nuno Estrócio +17
The exponential, pervasive rise of artificial intelligence (AI), hosted in large data centres, will test the limits of the underpinning infrastructure, including electricity and wa…
20 ps Non-Destructive Read and 1 ns Write Operations at <5 V in Ferroelectric HfO2/ZrO2 Non-Volatile Memories
Alexandre Baigol, Ruben Hamming-Green, Paul Uriarte Vicandi +8
Achieving low-voltage, nanosecond multi-level programming and non-destructive read-out of ferroelectric non-volatile memories (NVM) is critical for analog in-memory computing archi…
Epitaxial Sr(Sn, Ge)TiO buffer layers for continuous strain engineering on SrTiO substrates
Ruben Hamming-Green, Ewout van der Veer, Beatriz Noheda
Epitaxial strain plays a key role in determining the structure and functionality of thin films, with the choice of substrate being traditionally used to control the magnitude of th…
Guidelines for the optimization of hafnia-based ferroelectrics through superlattice engineering
Johanna van Gent, Binayak Mukherjee, Ewout van der Veer +5
Hafnia-based ferroelectrics are revolutionizing the data storage industry and the field of ferroelectrics, with improved materials and devices being reported monthly. However, full…
PdNeuRAM: forming-free, multi-bit Pd/HfO2 ReRAM for energy-efficient neuromorphic computing
Erbing Hua, Theofilos Spyrou, Majid Ahmadi +11
Memristor technology shows great promise for energy-efficient computing, yet it grapples with challenges like resistance drift and inherent variability. For filamentary Resistive R…