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physics.app-ph2024★ 1 cited
Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films
Md Redwanul Islam, Niklas Wolff, Georg Schönweger +8
This article examines systematic oxygen (O)-incorporation to reduce total leakage currents in sputtered wurtzite-type ferroelectric Al0.73Sc0.27N thin films, along with its impact…
physics.app-ph2024
Low Leakage Ferroelectric Heteroepitaxial AlScN Films on GaN
Keisuke Yazawa, Charles Evans, Elizabeth Dickey +3
Wurtzite (Al,Sc)N ferroelectrics are attractive for microelectronics applications due to their chemical and epitaxial structural compatibility with wurtzite semiconductors such as…