77 citations · 80 across the 8 of their papers we have counts for
6 papers · 1 filter
Halide donors in monoclinic- and corundum-phase GaO and AlO
Sai Mu, Haochen Wang, Yongjoong Shin +2
We present a systematic first-principles investigation of halide impurities (F and Cl) in GaO and AlO, considering both monoclinic and corundum phases. Our study of…
Strain effects on -type doping in AlN
Haochen Wang, Chris G. Van de Walle
Controllable doping in AlN and its alloys is essential for deep-ultraviolet light sources. Ionization energies for donors in AlN (, , $\mathrm{Se_N}…
Cr2O3/\b{eta}-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
Yizheng Liu, Haochen Wang, Carl Peterson +3
We report the fabrication of Cr2O3/\b{eta}-Ga2O3 heterojunction diodes using reactive magnetron sputtering of Cr2O3 on highly doped \b{eta}-Ga2O3 bulk substrates along (100), (010)…
Towards higher electro-optic response in AlScN
Haochen Wang, Sai Mu, Chris G. Van de Walle
Novel materials with large electro-optic (EO) coefficients are essential for developing ultra-compact broadband modulators and enabling effective quantum transduction. Compared to…
Unveiling the Pockels Coefficient of Ferroelectric Nitride ScAlN
Guangcanlan Yang, Haochen Wang, Sai Mu +7
Nitride ferroelectrics have recently emerged as promising alternatives to oxide ferroelectrics due to their compatibility with mainstream semiconductor processing. ScAlN, in partic…
Piezoelectric effect and polarization switching in AlScN
Haochen Wang, Nicholas Adamski, Sai Mu +1
Aluminum nitride is piezoelectric and exhibits spontaneous polarization along the -axis, but the polarization cannot be switched by applying an electric field. Adding Sc to AlN…