activity
20232025
most citedControl of Cu morphology on TaN barrier and combined Ru-TaN barrier/liner substrates for nanoscale interconnects from atomistic kinetic Monte Carlo simulations

6 citations · 6 across the 3 of their papers we have counts for

collaborators

4 papers

cond-mat.mtrl-sci2025

Developing a valence force field model for wurtzite semiconductors by exploiting similarities with [111]-oriented zinc blende systems: The case of wurtzite boron nitride, III-N materials and (B,In,Ga)N alloys

Aisling Power, Cara-Lena Nies, Stefan Schulz

Controlling the crystal phase and lattice mismatch of semiconductors offers a powerful route to engineer electronic and optical properties of heterostructures. As a consequence, se…

cond-mat.mtrl-sci2024★ 6 cited

Control of Cu morphology on TaN barrier and combined Ru-TaN barrier/liner substrates for nanoscale interconnects from atomistic kinetic Monte Carlo simulations

Samuel Aldana, Cara-Lena Nies, Michael Nolan

The miniaturization of electronic devices brings severe challenges in the deposition of metal interconnects in back end of line processing due to a continually decreasing volume av…

cond-mat.mtrl-sci2024

Impact of boron atom clustering on the electronic structure of (B,In)N alloys

Cara-Lena Nies, Stefan Schulz

Tailoring the electronic and optical properties of nitride-based alloys for optoelectronic applications in the ultraviolet and red spectral range has attracted significant attentio…

cond-mat.mtrl-sci2023

Electronic and optical properties of boron containing GaN alloys: The role boron atom clustering

Cara-Lena Nies, Thomas P. Sheerin, Stefan Schulz

Boron (B) containing III-nitride materials, such as wurtzite (B,Ga)N alloys, have recently attracted significant interest to tailor the electronic and optical properties of optoele…