Fabrication of (In,Ga)N pseudo-substrates by a three-step growth protocol without ex-situ processing

Huaide Zhang, Aidan F. Campbell, Jingxuan Kang +3

We fabricate (In,Ga)N pseudo-substrates with a total thickness of ~1 um grown on GaN templates using plasma-assisted molecular beam epitaxy. In a three-step process, we change grow…