4 papers
Physics-informed AI Accelerated Retention Analysis of Ferroelectric Vertical NAND: From Day-Scale TCAD to Second-Scale Surrogate Model
Gyujun Jeong, Sungwon Cho, Minji Shon +13
Ferroelectric field-effect transistors (FeFET)-based vertical NAND (Fe-VNAND) has emerged as a promising candidate to overcome z-scaling limitations with lower programming voltages…
ALD Oxidant as A Tuning Knob for Memory Window Expansion in Ferroelectric FETs for Vertical NAND Applications
Ranie Jeyakumar, Prasanna Venkatesan, Lance Fernandes +12
Dielectric inserts are widely used to expand the memory window (MW) in ferroelectric FETs (FeFETs) for vertical NAND applications, with prior efforts focused primarily on material…
Vertical NAND in a Ferroelectric-driven Paradigm Shift
Giuk Kim, Hyojun Choi, Prasanna Venkat Ravindran +12
Over the past decades, the relentless scaling and mass production of flash memory have underpinned the data-centric era. Yet charge-trap-based 3D NAND flash is now constrained by i…
An In-Situ Spatial-Temporal Sequence Detector for Neuromorphic Vision Sensor Empowered by High Density Vertical NAND Storage
Zijian Zhao, Varun Darshana Parekh, Po-Kai Hsu +17
Neuromorphic vision sensors require efficient real-time pattern recognition, yet conventional architectures struggle with energy and latency constraints. Here, we present a novel i…