4 papers
Tuning the Coercive Field in Ferroelectric Hf0.5Zr0.5O2-Al2O3 Heterostructures via Interfacial Charge Dynamics
Marshall B. Frye, Chanyoung Kim, Jeong-Woo Sun +8
Interleaving dielectric layers into ferroelectric Hf0.5Zr0.5O2 (HZO) films increases the memory window (MW) beyond what is accounted for by the dielectric constants. Determining th…
Vertical NAND in a Ferroelectric-driven Paradigm Shift
Giuk Kim, Hyojun Choi, Prasanna Venkat Ravindran +12
Over the past decades, the relentless scaling and mass production of flash memory have underpinned the data-centric era. Yet charge-trap-based 3D NAND flash is now constrained by i…
Sub-nm2 ferroelectric domains via charged 180 degree walls in ZrO2
Nashrah Afroze, Hamoon Fahrvandi, Guodong Ren +31
Flat phonon bands in fluorite ferroelectrics (HfO2 or ZrO2) shrink polar domains laterally to an irreducible half-unit-cell width (0.27 nm) within which the vertical arrangement of…
Kinetic control of ferroelectricity in ultrathin epitaxial Barium Titanate capacitors
Harish Kumarasubramanian, Prasanna Venkat Ravindran, Ting-Ran Liu +11
Ferroelectricity is characterized by the presence of spontaneous and switchable macroscopic polarization. Scaling limits of ferroelectricity have been of both fundamental and techn…