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physics.app-ph2026
Extremely Low Thermal Resistance Architectures for AlxGaN1-x Semiconductor Devices
Kidus Guye, Davide Orlandini, Seungheon Shin +4
Next-generation high-power radio-frequency (RF) devices increasingly demand transistors that operate efficiently with high gain at high frequencies. High-aluminum-content ultra-wid…
physics.app-ph2025
Scaled Ultra-Wide Bandgap AlGaN Polarization-Graded FET with Ultra-thin Buffer Layer
Yinxuan Zhu, Ashley Wissel-Garcia, Kidus Guye +12
We report on the design and demonstration of ultra-wide bandgap AlGaN polarization-graded field effect transistors with ultra-thin channels to enable excellent current density and…