13 citations · 23 across the 8 of their papers we have counts for
3 papers · 2 filters
Integration of p-type Cr2O3 on Ultra-Wide Bandgap AlGaN PolFETs with 2.5 kV Breakdown Voltage
Jonathan Pratt, Yizheng Liu, Ijaas Mohamed +8
We demonstrate UWBG AlGaN polarization-graded field-effect transistors (PolFETs) incorporating room-temperature sputtered p-type oxide Cr2O3 as a P-N heterojunction gate, enabling…
AlN Gate Interlayer for UWBG AlGaN Transistors with Breakdown Field >6.9 MV/cm and PFOM >1.8 GW/cm2
Seungheon Shin, Jonathan Pratt, Joe McGlone +5
We report the demonstration of regrown epitaxial AlN gate interlayers with ultra-wide bandgap (UWBG) AlGaN polarization-graded field effect transistors (PolFETs). The introduction…
High Breakdown Field Multi-kV UWBG AlGaN Transistors
Seungheon Shin, Kyle Liddy, Jon Pratt +6
We demonstrate high-performance UWBG AlGaN PolFETs exhibiting a state-of-the-art combination of nearly 1 A/mm on-state current (~ 960 mA/mm) and large breakdown field (> 4.8 MV/cm)…