1 citations · 1 across the 3 of their papers we have counts for
4 papers
Dielectric and gate metal engineering for threshold voltage modulation in enhancement mode monolayer MoS2 field effect transistors
Lixin Liu, Han Yan, Leyi Loh +8
Excellent gate electrostatics in field effect transistors (FETs) based on two-dimensional transition metal dichalcogenide (2D TMD) channels can dramatically decrease static power d…
Rewritable Complementary Nanoelectronics Enabled by Electron-Beam Programmable Ambipolar Doping
Qing Lan, Wenqing Song, Siyin Zhu +13
The ability to reversibly and site-selectively tune ambipolar doping in a single semiconductor is crucial for reconfigurable electronics beyond silicon, but remains highly challeng…
Graphene Heterostructure-Based Non-Volatile Memory Devices with Top Floating Gate Programming
Gabriel L. Rodrigues, Ana B. Yoshida, Guilherme S. Selmi +7
We present a graphene-based memory platform built on dual-gated field-effect transistors (GFETs). By integrating a lithographically defined metal patch directly atop the hexagonal…
Valley optoelectronics based on meta-waveguide photodetectors
Chi Li, Kaijian Xing, Wenhao Zhai +10
In transition metal dichalcogenides, the valley degree of freedom directly couples valley-polarised excitons - excited by circularly polarised light - to valley-dependent chiral ph…