Hybridization Gap and Edge States in Strained-layer InAs/In0.5Ga0.5Sb Quantum Spin Hall Insulator

Wenfeng Zhang, Peizhe Jia, Wen-kai Lou +4

The hybridization gap in strained-layer InAs/InxGa1-xSb quantum spin Hall insulators (QSHIs) is significantly enhanced compared to binary InAs/GaSb QSHI structures, where the typic…