6 papers · 1 filter
Enabling the Ambient Pressure Growth of ScB2 Crystals for AlGaN Power Electronics
Satya K. Kushwaha, Ahamed Raihan, Astrid D. Kengne +19
Here we report the growth of single crystalline ScB2, an ultrahigh-temperature ceramic, at ambient pressure in a laser-heated Optical Floating Zone via the travelling solvent metho…
Scandium diboride: a semi-metallic, lattice, thermally matched substrate for vertical AlGaN power electronics
MVS Chandrashekhar, Daniel Joel Harrison, Ahamed Raihan +22
We report the properties of hexagonal (space group P6/mmm) scandium diboride () single crystals grown by a laser diode floating zone method at growth rates of ~1mm/…
Enhanced thermal conductivity of (010) (AlxGa1-x)2O3 epitaxial films utilizing indium-catalyzed molecular beam epitaxy
Shivashree Gowda, Stephen Schaefer, Ethan A. Scott +3
(AlxGa1-x)2O3/beta-Ga2O3 transistors are an emerging candidate for high-power and high-frequency electronic devices. beta-Ga2O3 in particular is notably limited for anisotropic low…
Lock-In Infrared Thermography: Phase Analysis for Rapid, Wide-Range Thermal Conductivity Measurements
Ethan A. Scott, Jeffrey L. Braun, Jessica Reyes +5
We report on a phase-based lock-in thermography approach, combined with a multilayered thermal model (often employed in thermoreflectance analysis), to measure the thermal conducti…
Crystal growth and characterization of the ultra-high temperature substrate
Evan N. Crites, Sharad Mahatara, Joshua R. Hummel +12
Incorporation of (AGN) semiconductors into high power electronics offers efficiency improvements in power transmission, generation, and use, if approache…
Epitaxial growth and semiconductor properties of NiGa2O4 spinel for Ga2O3/NiO interfaces
Kingsley Egbo, Emily M. Garrity, Shivashree Shivamade Gowda +8
Unintentionally formed interfacial layers are ubiquitous in semiconductor devices that operate at extreme conditions. However, these layers' structure and properties often remain u…